Chartered and IBM extend collaboration

Chartered Semiconductor and IBM will extend their collaboration, now in its sixth year, to include 22nm bulk complementary metal oxide semiconductor technology.

The companies first signed a collaborative agreement in November 2002. Through the partnership, the companies have mastered five major generations of advanced process technology, including 90nm, 65nm, 45nm, 32nm and now 22nm logic processes.

"This news demonstrates that a long-term collaborative model for semiconductor research and development yields significant opportunities to improve application performance and cost," said Gary Patton, vice president of IBM Semiconductor Research and Development Centre.

"Going forward, it will be material science invention that will improve silicon performance while the collaborative model mitigates the escalating cost of technology and design and improves time to manufacture," he added.

The development of the 22nm will be conducted at IBM's 300nm semiconductor fabrication facility in New York, but each company will have the ability to implement the jointly developed processes in its own manufacturing facilities.